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TPW3R70APL - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TPW3R70APL
Manufacturer	Toshiba ↗
File Size	653.05 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPW3R70APL-Toshiba.pdf

TPW3R70APL Product details

Features

(1) High-speed switching (2) Small gate charge: QSW = 21 nC (typ. ) (3) Small output charge: Qoss = 74 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPW3R70APL DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial prod.

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Published: Jan 31, 2024 |