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TPW2900ENH Datasheet - Toshiba

TPW2900ENH Silicon N-Channel MOSFET

TPW2900ENH Features

* (1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit

TPW2900ENH-Toshiba.pdf

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Datasheet Details

Part number:

TPW2900ENH

Manufacturer:

Toshiba ↗

File Size:

372.76 KB

Description:

Silicon n-channel mosfet.

TPW2900ENH Distributor

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TPW2900ENH TPW2900ENH Silicon N-Channel MOSFET Toshiba