* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPW1R104PB DSOP Adv
TPW1R104PB Datasheet (635.42 KB)
TPW1R104PB
635.42 KB
N-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPW1R104PB
1. Applications
* Automotive
* Motor Drivers
* Switching Voltage Regulator.
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