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TPW1R104PB - N-channel MOSFET

Toshiba

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Datasheet Details

Part number	TPW1R104PB
Manufacturer	Toshiba ↗
File Size	635.42 KB
Description	N-channel MOSFET
Datasheet	TPW1R104PB-Toshiba.pdf

TPW1R104PB Product details

Features

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 0.95 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TPW1R104PB DSOP Advance(WF)M 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-08 2020-06-24 Rev.8.0 TPW1R104PB 4. Absolute.

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Published: Aug 20, 2020 |