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TPWR6003PL Datasheet - Toshiba

TPWR6003PL Silicon N-Channel MOSFET

TPWR6003PL Features

* (1) High-speed switching (2) Small gate charge: QSW = 30 nC (typ.) (3) Small output charge: Qoss = 81.3 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.36 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, I

TPWR6003PL Datasheet (513.90 KB)

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Datasheet Details

Part number:

TPWR6003PL

Manufacturer:

Toshiba ↗

File Size:

513.90 KB

Description:

Silicon n-channel mosfet.

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TPWR6003PL Silicon N-Channel MOSFET Toshiba

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