* (1) High-speed switching (2) Small gate charge: QSW = 23 nC (typ.) (3) Small output charge: Qoss = 85.4 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 0.65 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, I
TPWR8004PL Datasheet (570.24 KB)
TPWR8004PL
570.24 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) TPWR8004PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulat.
📁 Related Datasheet
TPWR8503NL Silicon N-channel MOSFET (Toshiba)
TPWR6003PL Silicon N-Channel MOSFET (Toshiba)
TPWR7904PB N-channel MOSFET (Toshiba)
TPW100A Current Transducers (Topstek)
TPW100R500A 1000V Super-junction Power MOSFET (Unigroup)
TPW10A-LTC Current Transducers (Topstek)
TPW12.5A-LTC Current Transducers (Topstek)
TPW125A Current Transducers (Topstek)
TPW1500CNH Silicon N-Channel MOSFET (Toshiba)
TPW150A Current Transducers (Topstek)
