TTA010 Datasheet - Toshiba

TTA010, Silicon PNP Triple-Diffused Type Bipolar Transistors

Bipolar Transistors Silicon PNP Triple-Diffused Type TTA010 TTA010 1.Applications * High-Voltage Switching 2..

datasheet Preview Page 1 from Datasheet4u.com

TTA010-Toshiba.pdf

TTA010 Datasheet Preview — Preview of TTA010 PDF

Datasheet Details

Part number:

TTA010

Manufacturer:

Toshiba ↗

File Size:

286.00 KB

Description:

Silicon PNP Triple-Diffused Type Bipolar Transistors

Features

* (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini

TTA010 Distributors

📁 Related Datasheet

TTA0001 TTA0002 TTA007 TTA1452 TTA1452B TTA145N08A

📌 All Tags

TTA010 Silicon PNP Triple-Diffused Type Bipolar Transistors Toshiba

Toshiba TTA010-like datasheet