Part number:
TTA010
Manufacturer:
File Size:
286.00 KB
Description:
Silicon pnp triple-diffused type bipolar transistors.
* (1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini
TTA010
286.00 KB
Silicon pnp triple-diffused type bipolar transistors.
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