TTA010 - Silicon PNP Triple-Diffused Type Bipolar Transistors

Toshiba

Datasheet Details

Part number	TTA010
Manufacturer	Toshiba ↗
File Size	286.00 KB
Description	Silicon PNP Triple-Diffused Type Bipolar Transistors
Datasheet	TTA010-Toshiba.pdf

(1) High collector voltage: VCEO = -500 V (min) (2) High DC current gain: hFE = 100 to 300 (VCE = -10 V, IC = -20 mA) (3) Low collector-emitter saturation voltage: VCE(sat) = -0.3 V (max) (IC = -20 mA, IB = -2 mA) 3. Packaging and Internal Circuit 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating Unit Collector-base voltage VCBO -500 V Collector-emitter voltage VCEO -500 V.

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Published: Apr 29, 2024 |