Datasheet4U Logo Datasheet4U.com

TTA014

Silicon PNP Epitaxial Type Bipolar Transistors

TTA014 Features

* (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.35 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A) 3. Packaging and Internal Circuit New PW-Mold 1. Base 2. Collector (He

TTA014 Datasheet (451.69 KB)

Preview of TTA014 PDF

Datasheet Details

Part number:

TTA014

Manufacturer:

Toshiba ↗

File Size:

451.69 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

📁 Related Datasheet

TTA010 Silicon PNP Triple-Diffused Type Bipolar Transistors (Toshiba)

TTA011 Silicon PNP Epitaxial Type Bipolar Transistors (Toshiba)

TTA012 Silicon PNP Epitaxial Type Bipolar Transistors (Toshiba)

TTA013 Silicon PNP Epitaxial Type Bipolar Transistors (Toshiba)

TTA0001 PNP Transistor (INCHANGE)

TTA0001 Silicon PNP Transistor (Toshiba Semiconductor)

TTA0002 PNP Transistor (INCHANGE)

TTA0002 Silicon PNP Transistor (Toshiba Semiconductor)

TTA003 Silicon PNP Epitaxial Type Bipolar Transistors (Toshiba)

TTA004 Silicon PNP Epitaxial Type Transistor (Toshiba)

TAGS

TTA014 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

Image Gallery

TTA014 Datasheet Preview Page 2 TTA014 Datasheet Preview Page 3

TTA014 Distributor