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TTA014 Datasheet - Toshiba

TTA014 Silicon PNP Epitaxial Type Bipolar Transistors

TTA014 Features

* (1) High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.35 V (max) (IC = -0.75 A, IB = -75 mA) (3) High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A) 3. Packaging and Internal Circuit New PW-Mold 1. Base 2. Collector (He

TTA014 Datasheet (451.69 KB)

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Datasheet Details

Part number:

TTA014

Manufacturer:

Toshiba ↗

File Size:

451.69 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA014 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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