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TTA012

Silicon PNP Epitaxial Type Bipolar Transistors

TTA012 Features

* (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A) 3. Packaging and Internal Circuit PW-Mini 1. Base 2. Collector (Heatsink

TTA012 Datasheet (298.82 KB)

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Datasheet Details

Part number:

TTA012

Manufacturer:

Toshiba ↗

File Size:

298.82 KB

Description:

Silicon pnp epitaxial type bipolar transistors.

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TTA012 Silicon PNP Epitaxial Type Bipolar Transistors Toshiba

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