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TTC011 Datasheet - Toshiba

TTC011 NPN Transistor

TTC011 Features

* (1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating U

TTC011-Toshiba.pdf

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Datasheet Details

Part number:

TTC011

Manufacturer:

Toshiba ↗

File Size:

184.87 KB

Description:

Npn transistor.

TTC011 Distributor

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TAGS

TTC011 TTC011 NPN Transistor Toshiba