TTC011 - NPN Transistor

Toshiba

Datasheet Details

(1) High collector breakdown voltage: VCEO = 230 V (2) High DC current gain: hFE = 100 to 320 (IC = 0.2 A) 3. Packaging and Internal Circuit TTC011 1. Emitter 2. Collector 3. Base TO-126 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 Emitter-base voltage VEBO 5 Collector current (DC) (Note 1) IC 1 A Collector current (pulsed) (Note 1) ICP 2.

📁 TTC011 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 20, 2021 |