TTC016 - NPN Transistor

Toshiba

Datasheet Details

(1) High DC current gain : hFE = 400 to 1000 (IC = 0.5 A) (2) Low collector saturation voltage : VCE(sat) = 0.22 V (max) (IC = 1.6 A, IB = 32 mA) (3) High-speed switching : tf = 95 ns (typ. ) 3. Packaging and Internal Circuit TTC016 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEX 100 Collector-em.

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Published: Jan 20, 2021 |