TTC015B - NPN Transistor

Toshiba

Datasheet Details

(1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1A) (4) Complementary to TTA008B 3. Packaging and Internal Circuit (Note) TTC015B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devic.

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Published: Jan 20, 2021 |