Datasheet Specifications
- Part number
- TTC015B
- Manufacturer
- Toshiba ↗
- File Size
- 223.85 KB
- Datasheet
- TTC015B-Toshiba.pdf
- Description
- NPN Transistor
Description
Bipolar Transistors Silicon NPN Epitaxial Type TTC015B 1.Applications * Power Amplifiers * Power Switching 2..
Features
* (1) High DC current gain : hFE = 100 to 200 (IC = 0.5 A) (2) Low collector emitter saturation voltage : VCE(sat) = 0.5 V (max) (IC = 1A) (3) High-speed switching : tstg = 400 ns (typ. ) (IC = 1A) (4) Complementary to TTA008B 3. Packaging and Internal Circuit (Note) TTC015B 1. Emitter 2. CollApplications
* Power AmplifiersTTC015B Distributors
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