TTC011B - NPN Transistor

Toshiba

Datasheet Details

(1) High collector voltage (2) Small collector output capacitance (3) High transition frequency (4) Complementary to TTA006B : VCEO = 230 V (min) : Cob = 20 pF (typ. ) : fT = 100 MHz (typ. ) 3. Packaging and Internal Circuit (Note) TTC011B 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard t.

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Published: Jan 20, 2021 |