TTC013 - NPN Transistor

Toshiba

Datasheet Details

(1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage . VCBO 600 V Collector-emitter voltage Emitter-base voltage VCEO 350 VEBO 7 Collector current (DC) (Note 1) IC 0.5 A Collector current (pulsed) B.

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Published: Jan 20, 2021 |