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TTC013 Datasheet - Toshiba

TTC013 NPN Transistor

TTC013 Features

* (1) High collector breakdown voltage: VCEO = 350 V (2) High DC current gain: hFE = 100 to 200 (IC = 50 mA) 3. Packaging and Internal Circuit TTC013 1. Base 2. Collector (Heatsink) 3. Emitter PW-Mini 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbo

TTC013-Toshiba.pdf

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Datasheet Details

Part number:

TTC013

Manufacturer:

Toshiba ↗

File Size:

180.79 KB

Description:

Npn transistor.

TTC013 Distributor

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TTC013 TTC013 NPN Transistor Toshiba