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TC59YM916BKG32B, TC59YM916BKG24A Datasheet - Toshiba America Electronic

TC59YM916BKG32B 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device

TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free www.DataSheet4U.com The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 512Mb Rambus XDR DRAM device is a CMOS DRAM organized as 32M words by 16 bits. The use of Differe.

TC59YM916BKG32B Features

* Highest pin bandwidth available

* 4000/3200/2400 Mb/s Octal Data Rate (ODR) Signaling

* Bi-directional differential RSL (DRSL) Flexible read/write bandwidth allocation Minimum pin count

* Programmable on-chip termination Adaptive impedance matching Reduced system co

TC59YM916BKG24A_ToshibaAmericaElectronic.pdf

This datasheet PDF includes multiple part numbers: TC59YM916BKG32B, TC59YM916BKG24A. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC59YM916BKG32B, TC59YM916BKG24A

Manufacturer:

Toshiba ↗ America Electronic

File Size:

1.37 MB

Description:

512-megabit xdrtm dram the rambus xdrtm dram device.

Note:

This datasheet PDF includes multiple part numbers: TC59YM916BKG32B, TC59YM916BKG24A.
Please refer to the document for exact specifications by model.

TC59YM916BKG32B Distributor

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TC59YM916BKG32B TC59YM916BKG24A 512-megabit XDRTM DRAM The Rambus XDRTM DRAM device Toshiba America Electronic