Datasheet Details
- Part number
- TPCS8213
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 180.11 KB
- Datasheet
- TPCS8213-ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
TPCS8213 Description
TPCS8213 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) TPCS8213 Lithium Ion Battery Applications * Small footprint due .
TPCS8213 Features
* luding data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all releva
TPCS8213 Applications
* Small footprint due to a small and thin package
* Low drain-source ON-resistance: RDS (ON) = 8.4 mΩ (typ. )
* High forward transfer admittance: |Yfs| = 13 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
* Enhancement-mode: Vth = 0.5~1.4 V (VDS
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