TPH3207WS

650V GaN FET

TPH3207WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* W

TPH3207WS General Description

The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies

*offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gat.

TPH3207WS Datasheet (1.29 MB)

TPH3207WS Datasheet Preview — Preview of TPH3207WS PDF

Datasheet Details

Part number:

TPH3207WS

Manufacturer:

Transphorm

File Size:

1.29 MB

Description:

650v gan fet.

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TAGS

TPH3207WS 650V GaN FET Transphorm

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TPH3207WS Features

TPH3207WS General Description

Datasheet Details

File Size:

Description:

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