TPH3207WS - 650V GaN FET
The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.
It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon, through lower gat
TPH3207WS Features
* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* W
