TPH3207WS Datasheet - Transphorm

TPH3207WS 650V GaN FET

The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gat.

TPH3207WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* W

TPH3207WS-Transphorm.pdf