Datasheet4U Logo Datasheet4U.com

TPH3207WS Datasheet - Transphorm

TPH3207WS - 650V GaN FET

The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gat

TPH3207WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* W

TPH3207WS-Transphorm.pdf

Preview of TPH3207WS PDF
TPH3207WS Datasheet Preview Page 2 TPH3207WS Datasheet Preview Page 3

Datasheet Details

Part number:

TPH3207WS

Manufacturer:

Transphorm

File Size:

1.29 MB

Description:

650v gan fet.

📁 Related Datasheet

📌 All Tags