TPH3207WS 650V GaN FET

TPH3207WS Description

650V GaN FET in TO-247 (source tab) TPH3207WS Not recommended for new designs *see TP65H035WS .
The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device.

TPH3207WS Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Intrinsic lifetime tests
* W

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Datasheet Details

Part number: TPH3207WS
Manufacturer: Transphorm
File Size: 1.29 MB
Datasheet: TPH3207WS-Transphorm.pdf
Description: 650V GaN FET

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650V GaN FET Transphorm

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