TPH3208L Datasheet - Transphorm

TPH3208L 650V GaN FET

The TPH3208L Series 650V, 110mΩ Gallium Nitride (GaN) FETs are normally-off devices. They combine state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through .

TPH3208L Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

TPH3208L-Transphorm.pdf