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TPH3208PS Datasheet - Transphorm

TPH3208PS 650V GaN FET

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower ga.

TPH3208PS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient

TPH3208PS-Transphorm.pdf

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Datasheet Details

Part number:

TPH3208PS

Manufacturer:

Transphorm

File Size:

1.22 MB

Description:

650v gan fet.

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TPH3208PS TPH3208PS 650V GaN FET Transphorm

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