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TPH3208PS

650V GaN FET

TPH3208PS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient

TPH3208PS General Description

The TPH3208PS 650V, 110mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies

*offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower ga.

TPH3208PS Datasheet (1.22 MB)

Preview of TPH3208PS PDF

Datasheet Details

Part number:

TPH3208PS

Manufacturer:

Transphorm

File Size:

1.22 MB

Description:

650v gan fet.

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TAGS

TPH3208PS 650V GaN FET Transphorm

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