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TGA2814-CP

GaN Power Amplifier

TGA2814-CP Features

* Frequency Range: 3.1

* 3.6 GHz

* Pout: 49 dBm at PIN = 27 dBm

* PAE: 50 % Pulsed

* Power Gain: 23 dB at PIN = 27 dBm

* Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %)

* Package Dimensions: 15.2 x 15.2 x 3.5 mm

* Package base is p

TGA2814-CP General Description

TriQuint’s TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB. The TGA2814-CP is packaged in a .

TGA2814-CP Datasheet (444.89 KB)

Preview of TGA2814-CP PDF

Datasheet Details

Part number:

TGA2814-CP

Manufacturer:

TriQuint Semiconductor

File Size:

444.89 KB

Description:

Gan power amplifier.

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TAGS

TGA2814-CP GaN Power Amplifier TriQuint Semiconductor

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