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TGA2817-SM

GaN Power Amplifier

TGA2817-SM Features

* Frequency Range: 2.9

* 3.5 GHz

* Pout: > 48 dBm (at Pin = 24 dBm)

* Large Signal Gain: > 24 dB (at Pin = 24 dBm)

* PAE: > 54 % (at Pin = 24 dBm)

* Bias: VD = 28 V, IDQ = 200 mA, VG =

* 2.8 V (Typ)

* Package Dimensions: 7.00 x 7.00 x 0.

TGA2817-SM General Description

TriQuint’s TGA2817-SM is a high-power, S-band amplifier fabricated on TriQuint’s TQGaN25 0.25um GaN on SiC production process. Covering 2.9-3.5 GHz, the TGA2817-SM provides > 48 dBm of saturated output power and > 24 dB of large-signal gain while achieving > 54 % power added efficiency. The TGA2817-.

TGA2817-SM Datasheet (588.66 KB)

Preview of TGA2817-SM PDF

Datasheet Details

Part number:

TGA2817-SM

Manufacturer:

TriQuint Semiconductor

File Size:

588.66 KB

Description:

Gan power amplifier.
Applications

* Military Radar

* Commercial Radar

* Wideband Amplifiers TGA2817-SM S-Band 60 W GaN Power Amplifier Product Fe.

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TAGS

TGA2817-SM GaN Power Amplifier TriQuint Semiconductor

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