Part number:
TSD2N60M
Manufacturer:
Truesemi
File Size:
428.40 KB
Description:
N-channel mosfet.
TSD2N60M Datasheet (428.40 KB)
* 1.9A,600V,Max.RDS(on)=5.00 Ω @ VGS =10V
* Low gate charge(typical 9nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR
TSD2N60M Datasheet (428.40 KB)
TSD2N60M
Truesemi
428.40 KB
N-channel mosfet.
📁 Related Datasheet
TSD2N60MZ - N-Channel MOSFET
(Truesemi)
TSD2N60MZ / TSU2N60MZ 600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
TSD2098A - Low Vcesat NPN Transistor
(Taiwan Semiconductor Company)
TSD2098A
Low Vcesat NPN Transistor
SOT-89
Pin Definition: 1. Base 2. Collector 3. Emitter
..
PRODUCT SUMMARY
BVCBO BVCEO IC VCE(SAT).
TSD20H100CW - Trench Schottky Surface Mount Rectifier
(Taiwan Semiconductor)
TSD20H100CW – TSD20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Surface Mount Rectifier
FEATURES
● Patented Trench Schottky technolo.
TSD20H120CW - Trench Schottky Surface Mount Rectifier
(Taiwan Semiconductor)
TSD20H100CW – TSD20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Surface Mount Rectifier
FEATURES
● Patented Trench Schottky technolo.
TSD20H150CW - Trench Schottky Surface Mount Rectifier
(Taiwan Semiconductor)
TSD20H100CW – TSD20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Surface Mount Rectifier
FEATURES
● Patented Trench Schottky technolo.
TSD20H200CW - Trench Schottky Surface Mount Rectifier
(Taiwan Semiconductor)
TSD20H100CW – TSD20H200CW
Taiwan Semiconductor
20A, 100V - 200V Trench Schottky Surface Mount Rectifier
FEATURES
● Patented Trench Schottky technolo.
TSD22N80F - N-Channel Enhancement Mode Power MOS Transistor Module
(ST Microelectronics)
..
..
..
..
..
.
TSD22N80V - N-Channel Enhancement Mode Power MOS Transistor Module
(ST Microelectronics)
..
..
..
..
..
.
