TSD1N60M - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSD1N60M Features
* 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V
* Low gate charge(typical 5.2nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA
