TSD1N60M Datasheet - Truesemi

TSD1N60M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD1N60M Features

* 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V

* Low gate charge(typical 5.2nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSD1N60M-Truesemi.pdf