TSD2N60MZ Datasheet (Truesemi)

TSD2N60MZ, N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSD2N60MZ Features

* 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* ESD improved capability

* Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute