TSD18N20M - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSD18N20M Features
* 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V
* Low gate charge(typical 22nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-
