TSD18N20M

N-Channel MOSFET

Truesemi

TSD18N20M Features

* 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V

* Low gate charge(typical 22nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-

TSD18N20M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD18N20M Datasheet (422.61 KB)

TSD18N20M Datasheet Preview — Preview of TSD18N20M PDF

Datasheet Details

Part number:

TSD18N20M

Manufacturer:

Truesemi

File Size:

422.61 KB

Description:

N-channel mosfet.

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TSD18N20M N-Channel MOSFET Truesemi

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TSD18N20M Features

TSD18N20M General Description

Datasheet Details

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