TSD18N20M Datasheet - Truesemi

TSD18N20M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD18N20M Features

* 18A,200V,Max.RDS(on)=0.17 Ω @ VGS =10V

* Low gate charge(typical 22nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter VDSS Drain-

TSD18N20M-Truesemi.pdf