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TSD4N60M - N-Channel MOSFET

TSD4N60M Description

TSD4N60M TSD4N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSD4N60M Features

* 2.8A,600V,Max. RDS(on)=2.50 Ω @ VGS =10V
* Low gate charge(typical 16nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

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Datasheet Details

Part number
TSD4N60M
Manufacturer
Truesemi
File Size
338.89 KB
Datasheet
TSD4N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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