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TSD4N60M

N-Channel MOSFET

TSD4N60M Features

* 2.8A,600V,Max.RDS(on)=2.50 Ω @ VGS =10V

* Low gate charge(typical 16nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSD4N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD4N60M Datasheet (338.89 KB)

Preview of TSD4N60M PDF

Datasheet Details

Part number:

TSD4N60M

Manufacturer:

Truesemi

File Size:

338.89 KB

Description:

N-channel mosfet.

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TSD4N60M N-Channel MOSFET Truesemi

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