TSD4N60M Datasheet (Truesemi)

TSD4N60M, N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSD4N60M Features

* 2.8A,600V,Max.RDS(on)=2.50 Ω @ VGS =10V

* Low gate charge(typical 16nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR