TSD630M Datasheet - Truesemi

TSD630M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD630M Features

* 7.8A,200V,Max.RDS(on)=0.4 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSD630M Datasheet (404.72 KB)

TSD630M Datasheet Preview — Preview of TSD630M PDF

Datasheet Details

Part number:

TSD630M

Manufacturer:

Truesemi

File Size:

404.72 KB

Description:

N-channel mosfet.

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TSD630M N-Channel MOSFET Truesemi

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