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TSD630M N-Channel MOSFET

TSD630M Description

TSD630M/TSU630M TSD630M/TSU630M 200V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSD630M Features

* 7.8A,200V,Max. RDS(on)=0.4 Ω @ VGS =10V
* Low gate charge(typical 20nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

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Datasheet Details

Part number
TSD630M
Manufacturer
Truesemi
File Size
404.72 KB
Datasheet
TSD630M-Truesemi.pdf
Description
N-Channel MOSFET

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