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TSD630M

N-Channel MOSFET

TSD630M Features

* 7.8A,200V,Max.RDS(on)=0.4 Ω @ VGS =10V

* Low gate charge(typical 20nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSD630M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD630M Datasheet (404.72 KB)

Preview of TSD630M PDF

Datasheet Details

Part number:

TSD630M

Manufacturer:

Truesemi

File Size:

404.72 KB

Description:

N-channel mosfet.

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TAGS

TSD630M N-Channel MOSFET Truesemi

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