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TSF3N80M

N-Channel MOSFET

TSF3N80M Features

* 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 14nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability GDS TO-220 GD S TO-220F D {

* G◀▲ {

* {S Absolute Maximum Ratings TC =

TSF3N80M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF3N80M Datasheet (262.09 KB)

Preview of TSF3N80M PDF

Datasheet Details

Part number:

TSF3N80M

Manufacturer:

Truesemi

File Size:

262.09 KB

Description:

N-channel mosfet.

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TAGS

TSF3N80M N-Channel MOSFET Truesemi

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