TSI10N60M Datasheet, Mosfet, Truesemi

✔ TSI10N60M Features

- 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-

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TSI10N60M

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Truesemi

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📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially

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TSI10N60M N-Channel MOSFET Truesemi