TSI10N60M Datasheet - Truesemi

N-Channel MOSFET

TSI10N60M Features

* - 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSI10N60M General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices .

TSI10N60M Datasheet (288.55 KB)

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TSI10N60M

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Truesemi

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288.55 KB

Description:

N-channel mosfet.

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TSI10N60M N-Channel MOSFET Truesemi

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TSI10N60M Features

TSI10N60M General Description

Datasheet Details

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