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TSI10N65M

N-Channel MOSFET

TSI10N65M Features

* - 10A, 650V, RDS(on) = 0.95Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSI10N65M Datasheet (315.01 KB)

Preview of TSI10N65M PDF

Datasheet Details

Part number:

TSI10N65M

Manufacturer:

Truesemi

File Size:

315.01 KB

Description:

N-channel mosfet.

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TSI10N65M N-Channel MOSFET Truesemi

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