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TSI7N80M - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSI7N80M
Manufacturer: Truesemi
File Size: 263.77 KB
Datasheet: TSI7N80M-Truesemi.pdf
Description: N-Channel MOSFET

TSI7N80M Product details

Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

Features

- 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Sing.

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N-Channel MOSFET Truesemi

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