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TSI4N60M - N-Channel MOSFET

Truesemi

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Datasheet Details

Part number: TSI4N60M
Manufacturer: Truesemi
File Size: 228.67 KB
Datasheet: TSI4N60M-Truesemi.pdf
Description: N-Channel MOSFET

TSI4N60M Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

4.0A, 600V, RDS(on) = 2.6 @VGS = 10 V.
Low gate charge ( typical 16nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Puls.

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N-Channel MOSFET Truesemi

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