TSP3N80N

N-Channel MOSFET

Truesemi

TSP3N80N Features

* 3.0A, 800V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 15nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings TC

TSP3N80N General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP3N80N Datasheet (257.19 KB)