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TSU1N60M - N-Channel MOSFET

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Truesemi

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TSU1N60M N-Channel MOSFET by Truesemi - Datasheet Preview — Datasheet preview – TSU1N60M

Datasheet Details

Part number	TSU1N60M
Manufacturer	Truesemi
File Size	386.64 KB
Description	N-Channel MOSFET
Datasheet	TSU1N60M Datasheet
Additional preview pages of the TSU1N60M datasheet.

Product details

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

1.0A,600V,Max. RDS(on)=11.5 Ω @ VGS =10V.
Low gate charge(typical 5.2nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ (Note 1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avala.

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Published: Apr 13, 2017 |