TSU1N60M Datasheet - Truesemi

TSU1N60M, N-Channel MOSFET

TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

Features

* 1.0A,600V,Max. RDS(on)=11.5 Ω @ VGS =10V
* Low gate charge(typical 5.2nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSU1N60M-Truesemi.pdf