TSU1N60M

N-Channel MOSFET

Truesemi

TSU1N60M Features

* 1.0A,600V,Max.RDS(on)=11.5 Ω @ VGS =10V

* Low gate charge(typical 5.2nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSU1N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSU1N60M Datasheet (386.64 KB)

TSU1N60M Datasheet Preview — Preview of TSU1N60M PDF

Datasheet Details

Part number:

TSU1N60M

Manufacturer:

Truesemi

File Size:

386.64 KB

Description:

N-channel mosfet.

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TSU1N60M N-Channel MOSFET Truesemi

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TSU1N60M Features

TSU1N60M General Description

Datasheet Details

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