Datasheet Details
- Part number
- TSU1N60M
- Manufacturer
- Truesemi
- File Size
- 386.64 KB
- Datasheet
- TSU1N60M-Truesemi.pdf
- Description
- N-Channel MOSFET
TSU1N60M Description
TSD1N60M/TSU1N60M TSD1N60M/TSU1N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
TSU1N60M Features
* 1.0A,600V,Max. RDS(on)=11.5 Ω @ VGS =10V
* Low gate charge(typical 5.2nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Absolute Maximum Ratings TJ=25℃ unless otherwise specified
Symbol VDSS VGS
ID
IDM EAS EA
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