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TSU5N65M Datasheet - Truesemi

N-Channel MOSFET

TSU5N65M Features

* - 3.0A, 650V, RDS(on) = 3.0Ω@VGS = 10 V - Low gate charge ( typical 16nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D GS GDS G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Pa

TSU5N65M General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

TSU5N65M Datasheet (303.53 KB)

Preview of TSU5N65M PDF

Datasheet Details

Part number:

TSU5N65M

Manufacturer:

Truesemi

File Size:

303.53 KB

Description:

N-channel mosfet.

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TSU5N65M N-Channel MOSFET Truesemi

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