TSU2N60M

N-Channel MOSFET

Truesemi

TSU2N60M Features

* 1.9A,600V,Max.RDS(on)=5.00 Ω @ VGS =10V

* Low gate charge(typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSU2N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSU2N60M Datasheet (428.40 KB)

TSU2N60M Datasheet Preview — Preview of TSU2N60M PDF

Datasheet Details

Part number:

TSU2N60M

Manufacturer:

Truesemi

File Size:

428.40 KB

Description:

N-channel mosfet.

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TSU2N60M N-Channel MOSFET Truesemi

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TSU2N60M Features

TSU2N60M General Description

Datasheet Details

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