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TSU2N60M N-Channel MOSFET

TSU2N60M Description

TSD2N60M/TSU2N60M TSD2N60M/TSU2N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSU2N60M Features

* 1.9A,600V,Max. RDS(on)=5.00 Ω @ VGS =10V
* Low gate charge(typical 9nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

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Datasheet Details

Part number
TSU2N60M
Manufacturer
Truesemi
File Size
428.40 KB
Datasheet
TSU2N60M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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