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TSU2N60MZ

N-Channel MOSFET

TSU2N60MZ Features

* 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* ESD improved capability

* Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute

TSU2N60MZ General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSU2N60MZ Datasheet (227.53 KB)

Preview of TSU2N60MZ PDF

Datasheet Details

Part number:

TSU2N60MZ

Manufacturer:

Truesemi

File Size:

227.53 KB

Description:

N-channel mosfet.

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TSU2N60MZ N-Channel MOSFET Truesemi

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