TSU2N60MZ - N-Channel MOSFET

Name: TSU2N60MZ
SKU: TSU2N60MZ-1108711

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
Low gate charge ( typical 9nC).
High ruggedness.
Fast switching.
100% avalanche tested.
ESD improved capability.
Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curren.

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Published: Apr 13, 2017 |