TSU80R1K3S1

N-Channel MOSFET

Truesemi

TSU80R1K3S1 Features

* 850V @TJ = 150 ℃

* Typ. RDS(on) = 1.1Ω

* Ultra Low gate charge (typ. Qg = 15nC)

* 100% avalanche tested TSD80R1K3S1 TSU80R1K3S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuou

TSU80R1K3S1 General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSU80R1K3S1 Datasheet (554.96 KB)

TSU80R1K3S1 Datasheet Preview — Preview of TSU80R1K3S1 PDF

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TSU80R1K3S1

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Truesemi

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554.96 KB

Description:

N-channel mosfet.

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TSU80R1K3S1 N-Channel MOSFET Truesemi

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TSU80R1K3S1 Features

TSU80R1K3S1 General Description

Datasheet Details

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