DU28200M - RF MOSFET Power Transistor
DU28200M Features
* N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&
* 4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Sourc
