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an AMP
cormany
CW Power Transistor, 2.3 GHz
Features
NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic MetalCeramic Package
3.5W
PH2323-3
v2.00
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
Electrical Characteristics
Parameter Collector-Emitter Collector-Emitter Input Power Power Gain CollectorEfficiency Input Return Loss Load Mismatch Tolerance Breakdown Voltage Leakage Current
at 25°C
1 Symbol 1 Min 1 Max 1 Units 1 Test Conditions
BV,,,
ICES PIN GP ‘Ic RL
60
1
1.0
1
V mA
w
I,=5 mA V,,=28 v
V,,=28
8 30
0.48 -
V, PoUT=3.0W, F=2.3 GHz -I
V, P,,?3.0
V, P,LI.F3.0
dB
%
1 V,,=28
1 V,,=28
W, F=2.3 GHz
W, F=2.3 GHz
W, F=2.