QN3109, QN3109M6N - N-Channel 30V Fast Switching MOSFET

UBIQ

QN3109 Datasheet Preview — This datasheet PDF includes multiple part numbers: QN3109, QN3109M6N. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	QN3109, QN3109M6N
Manufacturer	UBIQ
File Size	258.82 KB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3109M6N-UBIQ.pdf
Note	This datasheet PDF includes multiple part numbers: QN3109, QN3109M6N. Please refer to the document for exact specifications by model.

QN3109 Product details

Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

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Published: Jan 9, 2021 |