QN3109 Datasheet, Mosfet, UBIQ

QN3109 Features

• Mosfet Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A Applications High Frequen

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QN3109

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UBIQ

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📄 Datasheet

Description:

N-channel 30v fast switching mosfet. The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and ga

QN3109 Application

• Applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell densit

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QN3109

UBIQ

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