QN3103M6N Datasheet, Mosfet, UBIQ

QN3103M6N Features

  • Mosfet Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 6.3mΩ ID (TC=25℃) 68A Applications High Frequenc

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Part number:

QN3103M6N

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UBIQ

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📄 Datasheet

Description:

N-channel 30v fast switching mosfet. The QN3103M6N is the highest performance trench N-Channel MOSFET with extreme high cell density , which provide excellent RDSON and g

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QN3103M6N Application

  • Applications . The QN3103M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell densit

TAGS

QN3103M6N
N-Channel
30V
Fast
Switching
MOSFET
UBIQ

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