QN3102M6N - N-Channel 30V Fast Switching MOSFET

uPI Semiconductor

QN3102M6N Datasheet Preview — Preview of QN3102M6N PDF

Datasheet Details

Part number	QN3102M6N
Manufacturer	uPI Semiconductor
File Size	377.66 KB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3102M6N-uPISemiconductor.pdf

QN3102M6N Product details

Description

The QN3102M6N is a high performance trench N-channel MOSFET which utilizes extremely high cell density to provide low Rdson and gate charge characteristics.

Features

Advanced high cell density Trench technology.
Super Low Gate Charge.
Green Device Available Product Summary VDS 30V RDS(ON) max (VGS=10V) 7.5mΩ ID (TC=25 °C) 61A.

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Published: Jul 19, 2025 |