QN3109M6N - N-Channel 30V Fast Switching MOSFET

Datasheet Summary

Description

The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved.

Features

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.5mΩ ID (TC=25℃) 154A.

UBIQ

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Datasheet Details

Part number	QN3109M6N
Manufacturer	UBIQ
File Size	258.82 KB
Description	N-Channel 30V Fast Switching MOSFET
Datasheet	QN3109M6N Datasheet
Additional preview pages of the QN3109M6N datasheet.

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QN3109M6N NN-Channel 30V Fast Switching MOSFET General Description The QN3109M6N is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QN3109M6N meet the RoHS and Green Product requirement with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Green Device Available Product Summary BVDSS 30V RDSON (VGS=10V) 1.

Published: Mar 12, 2018 |