SI2305A
Features
- VDS (V) = -20V
- RDS(ON)＜40mΩ(VGS=-4.5V),ID=-4.2A
- RDS(ON)＜50mΩ(VGS=-2.5V),ID=-3.4A
UMW SI2305A
P-Channel MOSFET
SOT- 23
1. GATE 2. SOURCE 3. DRAIN
- Absolute Maximum Ratings Ta = 25℃
Parameter Drain-source voltage Gate-source voltage
Continuous drain current --
Pulsed drain current
TA=25℃ TA=70℃
Power dissipation --
TA=25℃ TA=70℃
Thermal Resistance.Junction-to-Ambient
Operating junction and storage temperature range
Symbol VDS VGS ID IDM PD RθJA
Tj,Tstg
Rating -20 ±12 -4.2 -3.4 -10
1.38 0.8 90 -55 to +150
Unit V V A A W
℃/W ℃
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UMW SI2305A
P-Channel MOSFET
- Electrical Characteristics Ta = 25℃
Parameter Drain-source breakdown voltage Gate threshold voltage
Zero gate voltage drain current
Gate-body leakage
Drain-source on-state resistance
On-state drain current
Forward transconductance Input capacitance
- Output capacitance
- Reverse transfer capacitance
- Total gate...
