P062ABD8 Datasheet - UNIKC

P062ABD8 MOSFET

P062ABD8 N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 6mΩ @VGS = 10V ID 60A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 60 38 150 Avalanche Current IAS 30 Avalanche Energy L=0.1mH EAS 131 Power Dissipation TC= 25 °C TC= 100°C PD 36 14 Operating Junction & Storage Temperature Ran.

P062ABD8 Datasheet (443.45 KB)