P062ABDD Datasheet - UNIKC

P062ABDD MOSFET

P062ABDD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 5.8mΩ @VGS = 10V ID 83A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID IDM 83 53 180 Avalanche Current IAS 40 Avalanche Energy L=0.1mH EAS 80 Power Dissipation TC= 25 °C TC= 100°C PD 69 27 Junction & S.

P062ABDD Datasheet (400.57 KB)