P0660AT Datasheet - UNIKC

P0660AT N-Channel MOSFET

P0660AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-220 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 TC = 25 °C TC = 100 °C ID IDM 6 4.3 20 Avalanche Energy3 EAS 45 Power Dissipation TC = 25 °C TC = 100 °C PD 113 45.4 Operating Junction & .

P0660AT Datasheet (597.76 KB)