P0660ATF Datasheet - UNIKC

P0660ATF N-Channel MOSFET

P0660ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.25Ω @VGS = 10V ID 6A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage Gate-Source Voltage VDS 600 VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C L = 10mH ID IDM IAS EAS 6 4.3 20 5 134 Power DissipationA TC = 25 °C TC = 100 °C Operating Junction.

P0660ATF Datasheet (436.05 KB)