P0660EI Datasheet - UNIKC

P0660EI N-Channel MOSFET

P0660EI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 600V 1.35Ω @VGS = 10V ID 6A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 6 3.8 20 3.5 61.2 Power Dissipation TC = 25 °C TC = 100 °C PD 83 33 Operating Junc.

P0660EI Datasheet (825.44 KB)