P0660ETF Datasheet - UNIKC

P0660ETF N-Channel MOSFET

P0660ETF / P0660ETFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 1.3Ω @VGS = 10V 6A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current2 Pulsed Drain Current1 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 6 3.8 20 3.5 61.2 Power Dissipation TC = 25 °C PD 32 TC .

P0660ETF Datasheet (852.82 KB)